By Rene Hubner
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Additional resources for Advanced Ta-Based Diffusion Barriers for Cu Interconnects
For a Ta62Si20N18 barrier, the Ta5Si3 crystallites do not grow on the SiO2 substrate, but rather on the initially formed Ta2N grains. According to EELS line scans performed at cross-sectional Cu/Ta62Si20N18/SiO2/Si and Cu/Ta56Si19N25/SiO2/Si samples, silicon is not 54 René Hübner incorporated into the crystalline Ta nitrides. The main fraction leaves the original barrier region during the crystallization process. These Si atoms diffuse into the Cu layer where they are dissolved  or further to the sample surface where they are oxidized.
1 mm wide slit was placed between the collimator and the graphite monochromator to enhance the angular resolution in 2θ. 125 mm thick Ni foil was automatically introduced into the primary beam to attenuate intensities higher than a critical level. 1 . 1 nm, respectively. 1 nm. For sensitive phase analysis of the Tabased diffusion barrier layers, glancing angle XRD measurements were performed at incidence angle ω = 2°. Phase identification was done by comparison of the positions of the measured diffraction maxima with peak positions of potential Tabased phases contained in the PDF (powder diffraction file) data base .
Phase identification was done by comparison of the positions of the measured diffraction maxima with peak positions of potential Tabased phases contained in the PDF (powder diffraction file) data base . Glow discharge optical emission spectroscopy (GDOES) depth profiles were recorded using a LECO GDS 750 spectrometer and a radio frequency generator . By simultaneous acquisition of photons emitted by various elements in an Ar plasma, a broad spectrum of the periodic table can be covered.